Northrop Grumman Microelectronics Products & Services’ latest entry in their series of W-band products include two new InP HEMT low noise amplifiers covering the 71-96 and 80-100 GHz frequency ranges. Both amplifiers are ideal for applications involving W-band imaging, sensors, radar, and short haul/high capacity links.
This low-noise amplifier (LNA) operates in the 2.3-2.8 GHz frequency range and features active bias and high linearity performance. In addition to the high linearity, the output stage also provides high gain. The advanced GaAs pHEMT enhancement mode front end device provides ultra-low Noise Figure. Stable performance over temperature and process variation are a direct result of the amplifier’s active bias circuitry.
Empower RF offers the new low-power series of smart RF and microwave amplifier systems equipped with feature rich software control. They are suitable for a variety of configurations including those in multi-octave bandwidth high-power CW, modulated, and pulse applications.
Atlanta Micro’s AM1018 is a cascadable gain block amplifier with 13 dB gain, a 2.5 dB noise figure, +35 dBm OIP3, +18/+21 dBm P1db, a 3.3V, 84 mA/+5.0V, 106 mA supply, a -40C to +85C operating temperature, and unconditional stability. It’s operational to +1.7V and comes in a 3mm QFN package.
Atlanta Micro’s AM1016 is a cascadable gain block amplifier with 14 dB gain, a 2.0 dB noise figure, +30 dBm OIP3, +17 dBm P1db, a 3.3V, 48 mA supply, a -40C to +85C operating temperature, and unconditional stability. It’s operational to +1.7V and comes in a 3mm QFN package.