MMIC Amplifiers

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Wideband GaAs MMIC Distributed Amplifier: CMD173 Wideband GaAs MMIC Distributed Amplifier: CMD173

This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.

GaN MMIC Amplifiers/Transistors GaN MMIC Amplifiers/Transistors

Northrop Grumman’s first three entries in their GaN MMIC Amplifiers/Transistors have been developed for defense and commercial ground satellite communications terminal markets and the commercial wireless infrastructure market. These GaN MMIC Amplifiers/Transistors are ideal for several applications including point-to-point radio, phased-array radar, Military SatCom, and point-to-multipoint communications, SATCOM terminals, and more. Links to datasheets of the amplifiers that make up this line can be found below.

LNA MMIC LNA MMIC

Custom MMIC has developed two new LNA MMIC that operate in the 6-18 GHz frequency and feature a 1.5 dB noise figure

Silicon MMIC Amplifier (BGA2001 T/R) Silicon MMIC Amplifier (BGA2001 T/R)
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package.
High Gain GaAs MMIC Buffer Amplifiers High Gain GaAs MMIC Buffer Amplifiers
Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively
MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip MMA-061827: 6 To 18 GHz Power Amplifier MMIC Chip
The MMA-061827 is a 6-18 GHz GaAs power amplifier MMIC chip. Small signal gain is typically 8.0 dB across band. In a balanced configuration, input and output VSWR are better than 1.5:1 with a typical P1B more than 29 dBm, and a Psat of 30 dBm. The typical performance is shown below. MMA-061827 can be used in broadband EW and defense applications. Hi-rel and space screening are available.
Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series Low Noise MMIC VCO Family With Buffer Amplifiers: RFVC182X Series
RFMD’s RFVC182X family of narrowband MMIC voltage controlled oscillators (VCOs) with integrated RF output buffer amplifiers have excellent temperature, shock, and vibration performance. These VCOs are suitable for applications in the 4.45 to 8.7GHz frequency range. All products in this family of VCOs provide POUT >8dBm from a +3V single supply and deliver low phase noise performance with minimum power consumption. Each VCO comes in a compact, RoHS compliant 4.0 x 4.0mm QFN package.
60 GHz Power Amplifier: HHPAV-433 60 GHz Power Amplifier: HHPAV-433
The HHPAV-433 Power Amplifier covers the frequency range from 59.5 to 60.5 GHz and is usable over the range of 58 to 64 GHz. The amplifier has an output power of +28.5 Psat and 18 dB gain. MMIC technology is employed for high reliability and repeatability employing one die. A single +6.0V bias is used to power up the amplifier. An onboard voltage regulator and bias sequencing circuitry provide the proper biasing for the unit.
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