13.5 To 16.0 GHz GaAs MMIC Power Amplifier - XP1057-BD

Mimix Broadband's three stage 13.5-16.0 GHz GaAs MMIC power amplifier has a small signal gain of 17.0 dB with 48.0 dBm output third order intercept. This MMIC uses Mimix Broadband's GaAs PHEMT device model technology, and is based upon optical lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications.

Features

• 10W Power Amplifier
• Dual Sided Bias Architecture
• 17 dB Small Signal Gain
• 39.0 dBm P1dB Compression Point
• 41.0 dBm Pulsed Saturated Output Power
• 48.0 dBm Output Third Order Intercept
• 100% On-Wafer DC, RF and Output Power Testing
• 100% Visual Inspection to MIL-STD-883
• Method 2010