transistors-products
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HF50-250 Bipolar Power Transistor
7/28/2009
The HF50-250 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness and reliability.
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1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN On SiC RF Transistor: QPD1425L
7/13/2023
The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency.
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DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor: QPD1022
6/6/2017
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.
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1011LD300 LDMOS Avionics Transistor
8/12/2005
APT RF’s LDMOS Avionics Transistor, 300W, Class AB, common source LDMOS power transistor is designed for Transponder/Interrogator systems covering 1030-1090 MHz...
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GaN HEMT RF Power Transistors
9/26/2017
Wolfspeed, a Cree Company, introduces a new series of GaN HEMT RF power transistors designed to enable broadband power amplifiers for commercial and military wireless communications and radar applications. These power devices are operate from a 28 V rail, and are developed using Wolfspeed’s proven 0.25 µm GaN-on-SiC process.
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500 W GaN/SiC Long-Pulse L-Band Transistor: IGN1214L500B
9/6/2017
Integra Technologies introduces the IGN1214L500B long-pulse transistor with GaN on SiC HEMT technology, operating at 380 W for applications from 1.2 – 1.4 GHz. The transistor exhibits 15.5 dB typical gain, and 65% efficiency, at 2 milliseconds and 20% pulse conditions. It is specified for use under Class AB operation.
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TCS800 Avionics Transistor
9/29/2005
APT RF’s Avionics Transistor, 800W, Class C, common base power transistor is designed for TCAS systems covering 1030-1090 MHz with 32uS, 1% pulsing at Vcc = 50V
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2731-100M Bipolar/LDMOS Transistor
10/17/2006
The 2731-100M is a high performance, common base, class C output stage offering 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications...
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GaN on Sic HEMT Transistor
1/25/2013
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
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MDS1100 Avionics Transistor
8/12/2005
APT-RF’s Avionics Transistor, Mode-S 1100W, Class C, common base power transistor is designed for standard Mode-S 128uS pulsing at 1030 MHz...