Insulated-gate Bipolar Transistors (IGBTS)
Richardson RFPD’s Insulated-gate Bipolar Transistors (IGBTS) use Microsemi’s leading-edge Power MOS 8™ technology and offer a dramatic reduction of twenty percent or more, in total switching and conduction losses as compared to competitive solutions.
These transistors feature more efficient power conversion through hard switching operation greater than 80 KHz. They’re also easy to parallel (positive temperature coefficient of Vcesat) to improve reliability in high power applications. Lastly, they feature Short Circuit Withstand Time Rated (SCWT) for reliable operation in applications requiring short circuit capability.
The APT40GR120B is offered in a TO-247 package. The APT40GR120B2D30 is a T-MAX® packaged device that includes a 30A anti-parallel, ultrafast recovery diode built with Microsemi's proprietary "DQ" generation of low switching loss, avalanche energy rated diode technology.