Products and Services
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800-2500MHz MMIC Wideband Amplifier (ZAMP002H6TA)
1/21/2009
The ZAMP002 is an low current high performance RF amplifier designed for L band and IF applications. Although the ZAMP002 has been designed primarily for DBS applications the ZAMP002 is capable of extending to frequencies of 2.5GHz so it has a good fit with various applications. An additional benefit of the ZAMP002 is it’s rising gain characteristic, this has been designed to counteract the gain losses found at the higher frequencies.
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XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
5/7/2005
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
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DC-22 GHz Distributed Amplifier: CMD240C4
7/1/2020
Qorvo offers the CMD240C4 wideband GaAs MMIC distributed amplifier housed in a leadless 4x4 mm surface mount package. The amplifier operates from DC to 22 GHz and is ideal for radar, space, satcom, test and measurement, and electronic warfare applications.
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MMA-022020B Broadband MMIC Power Amplifier
4/19/2007
The MMA-022020B is a 2 - 20GHz broadband MMIC medium power amplifier with 22.5 dBm output power. It is realized in advanced 0.25um AlGaAs/InGaAs pHEMT technology. The usable frequency range extends to 1 – 22 GHz. With on-chip input/output blocking capacitors and DC supply RF choke circuitry, it only requires simple DC bias circuits and RF connections for broad range applications
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Silicon MMIC Amplifier (BGA2003 T/R)
1/21/2009
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
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29MPA0373 26.0-31.0 GHz GaAs MMIC Power Amplifier
9/15/2004
Mimix Broadband’s four stage 26.0-31.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +36.0 dBm.
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5.7 – 7 GHz, 50 Watt GaN Power Amplifier: QPA1017D
1/15/2020
The QPA1017D is Qorvo’s MMIC power amplifier operating from 5.7 – 7.0 GHz for C-band radar and satellite communications applications. Fabricated on Qorvo’s production 0.15 um GaN on SiC process, the amplifier produces 50 W of saturated output power with 21 dB of large-signal gain while achieving greater than 40% power-added efficiency.
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CMM1434-SM - pHEMT GaAs MMIC Power Amplifier
3/8/2006
The CMM1434-SM is a four-stage pHEMT GaAs MMIC power amplifier that is ideally suited for transmit subsystems designed for Ku-Band VSAT applications. The CMM1434-SM provides 31.0 dB linear gain and delivers 2.5 watts of output power at saturation operating from 13.50 to 14.50 GHz frequency...
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DC-28 GHz GaAs pHEMT MMIC Power Amplifier: HMC994APM5E
7/10/2017
Analog Devices offers the new HMC994APM5E GaAs pHEMT MMIC distributed wideband power amplifier that is ideal for test instrumentation, military, space, and fiber optics applications. The amplifier operates within the DC to 28 GHz frequency range, and provides 15 dB of gain, +29 dBm of saturated output power, and 25% PAE from a +10V supply.
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75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F
9/4/2019
The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.