Downloads
-
750 V, 58 mohm SiC FET: UJ4C075060L8S Datasheet
3/15/2024
The UJ4C075060L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
750 V, 58 mohm SiC FET: UJ4C075060L8S
3/15/2024
The UJ4C075060L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
750 V, 44 mohm SiC FET: UJ4C075044L8S
3/15/2024
The UJ4C075044L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
750 V, 44 mohm SiC FET: UJ4C075044L8S Datasheet
3/15/2024
The UJ4C075044L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
Verify Networks To Be Prepared For Business-Critical Applications
3/15/2024
Dive into an overview of business-critical applications of private 5G networks and how passive and active network test solutions help verify network performance.
-
750 V, 33 mohm SiC FET: UJ4C075033L8S Datasheet
3/14/2024
The UJ4C075033L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
750 V, 33 mohm SiC FET: UJ4C075033L8S
3/14/2024
The UJ4C075033L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
750 V, 23 mohm SiC FET: UJ4C075023L8S Datasheet
3/14/2024
The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
750 V, 23 mohm SiC FET: UJ4C075023L8S
3/14/2024
The UJ4C075023L8S is a G4 SiC FET based on a unique ‘cascode’ circuit configuration where a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
-
1.0 - 6.0 GHz 35 Watt GaN Power Amplifier: QPM0106
3/14/2024
The QPM0106 is a packaged, high-power amplifier fabricated on Qorvo's production 0.25 um GaN on SiC process that operates from 1.0 - 6.0 GHz and provides 45.4 dBm (35 W) of saturated output power.