Semiconductors/ICs

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XR1002 20.0-32.0 GHz GaAs MMIC Receiver XR1002 20.0-32.0 GHz GaAs MMIC Receiver
Mimix Broadband's 20.0-32.0 GHz GaAs MMIC receiver has a 12.0 dB gain control range, a typical noise figure of 3.0 dB and 18.0 dB typical image rejection across the band...
SKY77532 -  2.5 GHz WiMAX Front-End Module SKY77532 - 2.5 GHz WiMAX Front-End Module
The SKY77532 is a highly integrated FEM for WiMAX handsets and terminals.
XP1012 37 To 40 GHz GaAs MMIC Power Amplifier XP1012 37 To 40 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm
XP1010 21 To 24 GHz GaAs MMIC Power Amplifier XP1010 21 To 24 GHz GaAs MMIC Power Amplifier
Mimix Broadband’s two stage 21.0-24.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +39.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity
 MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
The MHA-495433 is a high-performance reliable MMIC power amplifier utilizing high-reliability, high-breakdown voltage InGaP HBT technology. Power MMIC is ideally suited for driver or output stages in wireless applications such as 802.16 WiMAX, 802.11 WLAN & ISM, point-to-point radios & Telecom Infrastructure. MHA-495433 HBT MMIC Power Amplifier Chip has 50-ohm fully-matched output, pre-matched input, on-chip DC blocking capacitor, active bias and power detector built into the chip.
SMT Packaged GaAs MMIC Receivers SMT Packaged GaAs MMIC Receivers
Mimix Broadband, Inc. provides a family of Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receivers in RoHS-compliant, surface mount technology (SMT) packages, covering 11 to 45 GHz...
Silicon RFIC Wideband Amplifier (UPC2776TB-E3-A) Silicon RFIC Wideband Amplifier (UPC2776TB-E3-A)
NEC's UPC2776TB is a Silicon Monolithic integrated circuit which is manufactured using the NESAT™III process. This device is suitable for wide band IF blocks due to its high gain and flat response. The UPC2776TB is pin compatible and has comparable performance as the larger UPC2776T, so it is suitable for use as a replacement to help reduce system size. The IC is housed in a 6 pin super minimold or SOT-363 package.
Surface-Mount PIN Diodes For Radio Communications Systems Surface-Mount PIN Diodes For Radio Communications Systems
Skyworks Solutions, Inc. has introduced two high-power (>20W) series or shunt PIN diodes for T/R switch applications. In addition, the low thermal resistance package makes these devices ideal for large signal switch and attenuator applications. These series or shunt devices combine very low insertion loss, good isolation, unprecedented series diode power handling and low distortion in a very small package, and are designed for high-volume commercial, industrial and military radio communications systems such as land mobile radios, tactical radios, avionics and infrastructure markets.
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