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2200-Watts, 125 Volts, Class AB, 406 To 450 MHz Silicon Carbide SIT - 0405SC-2200M

Source: Microsemi Corporation
The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide Transistors from Microsemi RF IS.

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Datasheet: 2200-Watts, 125 Volts, Class AB, 406 To 450 MHz Silicon Carbide SIT - 0405SC-2200M

The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 2200 Watts of RF Peak power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to the series of High Power Silicon Carbide Transistors from Microsemi RF IS.

Click Here To Download:
Datasheet: 2200-Watts, 125 Volts, Class AB, 406 To 450 MHz Silicon Carbide SIT - 0405SC-2200M