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  1. GaN Power Amplifiers: TGA2216-SM Datasheet
    9/1/2015

    The TGA2216-SM is a wideband distributed GaN power amplifier that operates from 0.1-3.0 GHz, provides more than 10 W of saturated output power, and has greater than 13 dB of large signal gain. The device is available in a low-cost surface mount 32 lead AIN QFN package, and is ideally suited for commercial and military radar, communications, and electronic warfare.

  2. 90W Discrete Power Transistor: TGF2023-2-20 Datasheet
    9/1/2015

    The TGF2023-2-20 is a 90W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  3. 50W Discrete Power Transistor: TGF2023-2-10 Datasheet
    9/1/2015

    The TGF2023-2-10 is a 50W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  4. 25W Discrete Power Transistor: TGF2023-2-05 Datasheet
    9/1/2015

    The TGF2023-2-05 is a 25W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  5. 12W Discrete Power Transistor: TGF2023-2-02 Datasheet
    9/1/2015

    The TGF2023-2-02 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  6. 30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FS Datasheet
    9/1/2015

    The T2G6003028-FS is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  7. 30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FL Datasheet
    9/1/2015

    The T2G6003028-FL is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  8. 18W, 28V, DC-6 GHz Power Transistor: T2G6001528-Q3 Datasheet
    9/1/2015

    The T2G6001528-Q3 is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  9. 7W, 28V, DC-6 GHz Power Transistor: T2G6000528-Q3 Datasheet
    9/1/2015

    The T2G6000528-Q3 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  10. 15W, 28V, DC-6 GHz Power Transistor: T2G6001528-SG Datasheet
    9/1/2015

    The T2G6001528-SG is a 15W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

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