Downloads

  1. Automotive Solutions Product Portfolio
    9/2/2015

    Qorvo offers an expanding portfolio of automotive related products for Wi-Fi applications which includes high-linearity front end modules (FEMs), low-loss switches, and filters. These products are designed to reduce the time it takes to develop Wi-Fi systems, making it easier to implement onto and an automotive PCB design.

  2. GaN Solutions Brochure
    9/2/2015

    Qorvo has offered a broad range of innovative gallium nitride (GaN) products and technologies over the past 15 years. Their high-performance GaN technology supports products operating from the DC through Ka-band. With proven reliability at high junction temperatures, Qorvo provides products with excellent noise figures, high power handling, and high thermal conductivity. Qorvo is also accredited with many foundry processes including post-processing, packaging/assembly and test services that support the high-frequency standard portfolio.

  3. GaN Power Amplifiers: TGA2216-SM Datasheet
    9/1/2015

    The TGA2216-SM is a wideband distributed GaN power amplifier that operates from 0.1-3.0 GHz, provides more than 10 W of saturated output power, and has greater than 13 dB of large signal gain. The device is available in a low-cost surface mount 32 lead AIN QFN package, and is ideally suited for commercial and military radar, communications, and electronic warfare.

  4. 90W Discrete Power Transistor: TGF2023-2-20 Datasheet
    9/1/2015

    The TGF2023-2-20 is a 90W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  5. 50W Discrete Power Transistor: TGF2023-2-10 Datasheet
    9/1/2015

    The TGF2023-2-10 is a 50W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  6. 25W Discrete Power Transistor: TGF2023-2-05 Datasheet
    9/1/2015

    The TGF2023-2-05 is a 25W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  7. 12W Discrete Power Transistor: TGF2023-2-02 Datasheet
    9/1/2015

    The TGF2023-2-02 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 18 GHz range, and an operating voltage of Dec-32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  8. 30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FS Datasheet
    9/1/2015

    The T2G6003028-FS is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  9. 30W, 28V, DC-6 GHz Power Transistor: T2G6003028-FL Datasheet
    9/1/2015

    The T2G6003028-FL is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

  10. 18W, 28V, DC-6 GHz Power Transistor: T2G6001528-Q3 Datasheet
    9/1/2015

    The T2G6001528-Q3 is an 18W discrete GaN on SiC HEMT with an operating frequency in the DC – 6 GHz range, and an operating voltage of 28V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and test instrumentation.

Newsletter Signup
Newsletter Signup
Get the latest RF/microwave industry news, insights, and analysis delivered to your inbox.
Join your peers
By clicking Sign Me Up, you agree to our Terms and that you have read our Privacy Policy.