GlobeNewswire Press

1. RFMD Ships Pre-Production Gallium Nitride (GaN)-Based CATV Hybrid Amplifiers To Major U.S.-Based CATV Equipment Provider
   12/15/2009
   RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that RFMD has commenced pre-production shipments of high-performance gallium nitride (GaN)-based CATV hybrid amplifiers to a major U.S.-based cable television (CATV) equipment provider.
2. ITT Wins $9.7M Contract To Produce "Netted Iridium" Tactical Radio Handsets
   12/3/2009
   Iridium Communications Inc. (Nasdaq:IRDM - News) and ITT Corporation (NYSE:ITT - News) today announced that ITT has received a contract from the U.S. Naval Surface Warfare Center (NSWC) Dahlgren Division to supply 1,450 Iridium-based handheld tactical satellite communication devices for use by U.S. forces in Iraq and Afghanistan
3. RFMD® Selected By Leading Smartphone Manufacturer To Supply High Performance Cellular Switch
   11/23/2009
   RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance RF components and compound semiconductors, today announced that RFMD has been selected by a leading manufacturer of smartphones to support two upcoming CDMA smartphones.
4. RFMD® Receives First GaN Product Purchase Order From Tier-One Wireless Base Station Manufacturer
   11/18/2009
   RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD® has received its first purchase order from a tier-one wireless base station original equipment manufacturer (OEM) for a product featuring RFMD's state-of-the-art gallium nitride (GaN) process technology.
5. RFMD® Announces Major Gallium Nitride (GaN) Milestones
   11/18/2009
   RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced that RFMD® has qualified and released the RF3931, a 48-volt, 30-watt gallium nitride (GaN) unmatched transistor optimized for high power commercial and defense applications.
6. ZTE Selects RFMD® To Support High Volume S305 Handset
   10/23/2009
   RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today announced ZTE has selected two of RFMD's dual-band transmit modules to support ZTE's S305 GSM handset.
7. RFMD® Secures Multiple Design Wins For GPS LNA Module
   10/16/2009
   RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced RFMD has secured multiple high-volume design wins for its RF2815 GPS LNA module.
8. LTX-Credence Announces Unisem's Selection Of X-Series For RF Test
   9/29/2009
   LTX-Credence Corporation (Nasdaq:LTXC), a global provider of focused, cost-optimized ATE solutions, today announced that Unisem, a global provider of semiconductor assembly and test services, has selected the X-Series for volume production testing of a wide range of RF devices including power amplifiers, transceivers, and integrated RF SOC devices
9. Microsemi Extends Its New Radiation Hardened Transistor Product Line
   9/9/2009
   Microsemi Corporation, a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, announced today that DSCC qualification has been granted on their JANSR2N3439 and JANSR2N3440 radiation hardened medium power transistors.
10. RFMD And U.S. Department Of Energy's National Renewable Energy Laboratory Announce Collaboration
    7/2/2009
    RF Micro Devices, Inc., a global leader in the design and manufacture of high-performance semiconductor components, today announced it has entered into a cooperative agreement with the U.S. Department of Energy's National Renewable Energy Laboratory (NREL) to develop a commercially viable and high volume-capable compound semiconductor-based process for high-performance photovoltaic (PV) cells.

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