Datasheet: IGN2731M25 - GaN HEMT S-Band Radar Transistor

IGN2731M25 is an input matched, gallium nitride (GaN) high electron mobility transistor (HEMT). This part is designed for S-Band radar applications operating over the 2.7 – 3.1 GHz instantaneous frequency band. Under 300us / 10% pulse conditions it supplies a minimum of 25 watts of peak output power with 8dB gain typically. Specified operation is with Class AB bias. When appropriately rated, it is operable under a wide range of pulse widths and duty factors. It operates with spectral purity into all phases of 3:1 output load VSWR. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture. The use of external tuners is not allowed during screening.