Freescale Launches Transistor Line For ISM Market
This expansion was spawned by the development of 50V VHV6 RF LDMOS technology (very high voltage 6th generation RF laterally diffused metal oxide semiconductor), a 50V enhancement to Freescale's 28V LDMOS technology. The increase to a 50V supply voltage in LDMOS technology allows the designer to achieve higher power levels and to attain performance levels that exceed those available in the ISM marketplace.
"Freescale's market leadership in RF Power for cellular infrastructure, combined with the development of 50V LDMOS technology, puts us in a unique position to expand into the ISM space with truly innovative products," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "Additionally, our leadership in over-molded plastic packaging will allow customers to develop the most cost-effective solutions available for ISM applications, such as plasma generators and MRI (magnetic resonance imaging) systems."
The flagship of Freescale's ISM product offering is the MRF6V2300NB, a 300W, 50V LDMOS transistor with a frequency of operation up to 450 MHz and manufactured in the TO-272-WB-4 over-molded plastic package. This device can produce a gain of 27dB at an efficiency of 68 percent. This level of performance allows ISM system designers to eliminate gain stages. In addition, the device is stable with a ruggedness tolerance of 10:1 VSWR.
Freescale is expanding into two distinct ISM frequency markets: the HF/VHF market and the 2.45 GHz ISM band. Addressing the HF/VHF space from 10 to 450 MHz, Freescale is offering three transistors that use VHV6 50V LDMOS technology. These include the flagship MRF6V2300NB, as well as the MRF6V2150NB (150W, 69 percent efficiency, 25dB gain) and the MRF6V2010NB (10W, 68 percent efficiency, 25dB gain). For the 2.45 GHz ISM band, Freescale offers three devices that use 28V LDMOS technology: the MRF6P24190H (190W, 46 percent efficiency, 13dB gain), the MRF6S24140H (140W, 45 percent efficiency, 13dB gain) and the MW6IC2420NB (2-stage 20W, 21 percent efficiency, 21dB gain).
Sample quantities of all six ISM devices are now available. Additionally, all three 2.45 GHz devices are in production. The MRF6V2150NB is planned to be available in full production in August 2006, and the MRF6V2300NB and MRF6V2010NB are planned to be available in full production in Q4 2006.
SOURCE: Freescale Semiconductor, Inc.