MTT-S 2007: Nitronex Develops 4-Watt Pre-Driver Power Transistor

Honolulu -- IEEE MTT-S International Microwave Symposium -- Nitronex has developed a 4W GaN on Si pre-driver power transistor. Designated the NPTB00004, the high-power, high efficiency transistor is designed for a wide variety of applications within the cellular, WiMAX, and broadband markets.

At 900 MHz, the NPTB00004 power transistor has input/output impedances near 50 ohms, reducing the need for external matching circuits. Under WCDMA modulation at 2.1 GHz, the power typically delivers 14.5 dB of power gain, 25% efficiency at an ACPR of -45 dBc.

"The NPTB00004 provides improved power and efficiency for a given linearity compared to existing solutions in the pre-driver market," said Chris Rauh, Nitronex VP Sales and Marketing. "We believe the combination of our SIGANTIC process and the qualified low-cost plastic overmold packaging assembly at Amkor Technology, Inc. is a winning combination for our customers."

General sampling will begin in June and full production qualification is expected in August. The NPTB00004 is lead-free and RoHS compliant.

SOURCE: Nitronex