Datasheet | July 7, 2005

Datasheet: IB2729M170 S-Band Radar Transistor

Source: Integra Technologies, Inc.
The high power pulsed radar transistor part number IB2729M170 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C mode this common base device supplies a minimum of 170 watts of peak pulse power under the conditions of 100µs pulse width and 10% duty cycle. All devices are 100% screened for large signal RF parameters, including power gain compression.
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