MTT-S 2007: Mimix Introduces 2 To 18 GHz GaAs MMIC Wide Band Buffer Amplifier

Honolulu -- IEEE MTT-S International Microwave Symposium -- Mimix Broadband, Inc. introduces a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) wide band buffer amplifier with on-chip drain bias coil and DC blocking. Using 0.30 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the buffer amplifier covers the 2 to 18 GHz frequency bands and has a small signal gain of 9 dB with a noise figure of 4.5 dB across the band. Identified as the CMM4000-BD, this device also achieves 19 dBm P1dB compression point and is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications.

"The CMM4000-BD is well suited as a buffer stage for wide bandwidth applications," stated Jeff Kovitz, Senior Product Manager, Mimix Broadband, Inc. "The device is a single supply distributed amplifier with integrated bias coil, providing excellent input and output match coupled with a flat gain response across frequency. Solid performance over temperature makes this device an ideal addition to any multi-stage amplifier application."

Mimix performs 100% on-wafer DC testing and 100% RF wafer qualification, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Production quantities are available today from stock.

SOURCE: Mimix Broadband, Inc.