Datasheet: CMM1100 2 To 18 GHz Low Noise Gain Block Amplifier
Using 0.25 um optical
etch-stop pseudomorphic high electron mobility transistor (pHEMT) device model technology, this low noise
gain block, identified as CMM1100, covers the 2 to 18 frequency bands. The CMM1100 provides 3.5 dB noise
figure and 18 dB gain, delivering 16 dBm P1dB.
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