Nitronex Announces 100W GaN-on-Si Power Transistor For WiMAX Applications

Durham, NC -- Nitronex has developed a 28V, 100W Gallium Nitride high electron mobility transistor (HEMT) suitable for WiMAX applications. Designed using Nitronex's patented SIGANTIC NRF1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 to 2.7 GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21% efficiency, and less than 2.5% EVM at >10W of power.

"The NPT25100 is a device our customers are eager to receive," said Chris Rauh, VP of Sales and Marketing for Nitronex. "The market for 2.5 GHz WiMAX solutions is accelerating and the NPT25100 HEMT device will deliver the kind of price and performance our customers need."

The NPT25100 is packaged in a thermally enhanced Copper Moly Copper package that will be offered in both bolt-down and pill versions. Samples and application boards will be available starting in June and full production qualification is expected in July.

The NPT25100 is lead-free and RoHS compliant.

Nitronex will be exhibiting the NPT25100 during MTT-S, June 3 - 7 in Honolulu, at booth #1708.

SOURCE: Nitronex