Datasheet: RF Power Transistor 200 W 50 Volt 30 MHz: HF50-200

Spectrum Devices Corporation announced the release of their HF50-200 RF Power transistor designed for the 50V, 2-30 MHz RF Communications, RF Power Supply and RF Generator markets. Operating at 30 MHz and 50 Volts DC, the Power Transistor will provide a minimum Power Gain of 13.5 dB, with the Output Power specified at 200 Watts, PEP. The HF50 series products utilize the unique Spectrum Devices Bipolar process, offering enhanced DC Breakdown characteristics with a marked 60% improvement in BVCBO from 110 Volts to 175 volts. The HF50-200 is a drop-in equivalent to the Philips BLW96 and Microsemi S200-50. The new 200 Watt product provides the customer with an additional 1.0 dB of power gain over the competition, which provides additional margin for the amplifier output performance.

HF50-200 Availability
The HF50-200 is packaged in the industry standard SOE .500 Flange. Samples are available from inventory. Production availability will be Stock to 8 Weeks ARO, up to 500 pieces. For larger quantities, please consult the factory