Datasheet | June 29, 2012

LDMOS RF Power Transistor: MRFE6VP100HR5 Datasheet

Source: Richardson RFPD

This LDMOS RF Power Transistor is suited for applications subject to harsh conditions and is ideal for integration into aerospace and defense systems, test equipment, radar systems, and more. It features a 1.8 MHz to 2000 MHz frequency range, 26 dB gain, 100W Pout, and more.

access the Datasheet!

Get unlimited access to:

Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue. X

Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.

Subscribe to RF Globalnet X

Please enter your email address and create a password to access the full content, Or log in to your account to continue.

or

Subscribe to RF Globalnet