Gunn Diodes

Click Here To Download:
•Datasheet: Discrete Frequency: Anode Heatsink
• Datasheet: Discrete Frequency: Cathode Heatsink

Discrete Frequency: Anode Heatsink
MDT's GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MDT by the Vapor Phase Epitaxy technique. The layers are processed at MDT using proprietary techniques resulting in ultralow phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5 to 35.5 GHz.

Features

• High Reliability
• Low-Phase Noise
• 9.5 to 35.5 GHz Operation
• Pulsed and CW Designs to 20 mW

Applications

• Motion Detectors
• Transmitters and Receivers
• Beacons
• Automotive Collision Avoidance Radars
• Radars
• Radiometers
• Instrumentation

Discrete Frequency: Cathode Heatsink
MDT's GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MDT by the Vapor Phase Epitaxy technique. The layers are processed at MDT using proprietary techniques resulting in low phase and 1/f noise. MDT Gunn diodes are available in a variety of microwave ceramic packages are available for operation from 5 to 110 GHz.

Features

• CW Designs to 500 mW
• Pulsed Designs to 10 W
• Frequency Coverage Specified from 5.9–95 GHz
• Low Phase Noise
• High Reliability

Applications

• Motion Detectors
• Transmitters and Receivers
• Beacons
• Automotive Collision Avoidance Radars
• Radars
• Radiometers
• Instrumentation

Click Here To Download:
•Datasheet: Discrete Frequency: Anode Heatsink
• Datasheet: Discrete Frequency: Cathode Heatsink