Product/Service

GaN Amplifiers

Source: Empower RF Systems, Inc.

Empower has a versatile product line and has become a leader in the design, development and production of Gallium Nitride (GaN) power amplifiers. Although Empower has many product lines encompassing state-of-the-art Bipolar, MOSFET, LDMOS and GaAs FET devices, GaN has become the marquee technology for counter IED jammers.

Empower has a versatile product line and has become a leader in the design, development and production of Gallium Nitride (GaN) power amplifiers. Although Empower has many product lines encompassing state-of-the-art Bipolar, MOSFET, LDMOS and GaAs FET devices, GaN has become the marquee technology for counter IED jammers.

Empower continues to work closely and has developed strategic relationships with GaN device manufacturers and has capitalized on using the latest thermally enhanced GaN on Silicon Carbide (SiC) devices available.

GaN's increased power density (mm/W) has enabled Empower to reduce power amplifier sizes, minimize cooling and heat-sink demands and package more power per given volume. With increased efficiencies Empower can deliver reliable, smaller and lighter broadband power amplifiers.

GaN Amplifier Modules

Model
Start (MHz)
Stop (MHz)
Pout (Watt)
Gain (dB)
100
800
50
52
20
1000
25
44
500
2500
25
44
500
2500
50
46
500
2500
100
50
800
2500
50
46
1000
2500
100
12
800
3000
50
50
960
3000
160
54
1000
3100
100
10
2500
6000
10
40
2500
6000
35
48
BBM5A8CGM 2000 6000 35 55
BBM4A6AHM 1000 3000 50 50


GaN Amplifier Systems

Model
Start (MHz)
Stop (MHz)
Pout (Watt)
Gain (dB)
1600
1700
1000
60
500
2500
50
46
500
2500
100
50
500
2500
50
46
1000
2500
500
56
20
3000
250
54
105
3000
200
53
700
3800
200
54
3000
6000
50
47


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Empower RF Company Overview – Amplifiers for Electronic Attack, Radar, Test & Measurement and Communications