GaN Amplifiers
Empower has a versatile product line and has become a leader in the design, development and production of Gallium Nitride (GaN) power amplifiers. Although Empower has many product lines encompassing state-of-the-art Bipolar, MOSFET, LDMOS and GaAs FET devices, GaN has become the marquee technology for counter IED jammers.
Empower has a versatile product line and has become a leader in the design, development and production of Gallium Nitride (GaN) power amplifiers. Although Empower has many product lines encompassing state-of-the-art Bipolar, MOSFET, LDMOS and GaAs FET devices, GaN has become the marquee technology for counter IED jammers.
Empower continues to work closely and has developed strategic relationships with GaN device manufacturers and has capitalized on using the latest thermally enhanced GaN on Silicon Carbide (SiC) devices available.
GaN's increased power density (mm/W) has enabled Empower to reduce power amplifier sizes, minimize cooling and heat-sink demands and package more power per given volume. With increased efficiencies Empower can deliver reliable, smaller and lighter broadband power amplifiers.
GaN Amplifier Modules
Model
|
Start (MHz)
|
Stop (MHz)
|
Pout (Watt)
|
Gain (dB)
|
100
|
800
|
50
|
52
|
|
20
|
1000
|
25
|
44
|
|
500
|
2500
|
25
|
44
|
|
500
|
2500
|
50
|
46
|
|
500
|
2500
|
100
|
50
|
|
800
|
2500
|
50
|
46
|
|
1000
|
2500
|
100
|
12
|
|
800
|
3000
|
50
|
50
|
|
960
|
3000
|
160
|
54
|
|
1000
|
3100
|
100
|
10
|
|
2500
|
6000
|
10
|
40
|
|
2500
|
6000
|
35
|
48
|
|
BBM5A8CGM | 2000 | 6000 | 35 | 55 |
BBM4A6AHM | 1000 | 3000 | 50 | 50 |
GaN Amplifier Systems
Model
|
Start (MHz)
|
Stop (MHz)
|
Pout (Watt)
|
Gain (dB)
|
1600
|
1700
|
1000
|
60
|
|
500
|
2500
|
50
|
46
|
|
500
|
2500
|
100
|
50
|
|
500
|
2500
|
50
|
46
|
|
1000
|
2500
|
500
|
56
|
|
20
|
3000
|
250
|
54
|
|
105
|
3000
|
200
|
53
|
|
700
|
3800
|
200
|
54
|
|
3000
|
6000
|
50
|
47
|
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•Empower RF Company Overview – Amplifiers for Electronic Attack, Radar, Test & Measurement and Communications