Product/Service
High-Efficiency Amplifier for Handheld Systems
Source: RF Micro Devices, Inc.
The RF2172 is a medium-power, high-efficiency amplifier IC manufactured with an advanced GaAs HBT (gallium arsenide heterojunction bipolar transistor) process
The RF2172 is a medium-power, high-efficiency amplifier IC manufactured with an advanced GaAs HBT (gallium arsenide heterojunction bipolar transistor) process. Engineered for use as the final RF amplifier in frequency hopping/direct sequence spread spectrum cordless telephones or other applications in the ISM band, the device has been designed with 0-28 dB variable gain with analog control to optimize transmit power. In addition, it features 24 dBm typical output power, 58% efficiency at maximum output and an on-board power down mode. Packaged in a 4 x 4 mm LCC, the RF2172 is available for immediate shipment at $1.27 per unit in order quantities of 10,000.
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