Product/Service
GaN Wideband Power Amplifiers
Source: RF Micro Devices, Inc.
The RF3826, RFHA1000, and RFHA1003 are GaN Wideband Power Amplifiers ideal for applications involving Class AB Operation for Public Mobile Radio, Power Amplifier Stage for Commercial Wireless Infrastructure, General Purpose Tx Amplification, Test Instrumentation, Civilian and Military Radar.
Common Features:
- Advanced GaN HEMT Technology
- Advanced Heat-Sink Technology
- Input Internally Matched to 50?
- EAR99 Export Control
- Large Signal Models Available
- Package: AlN Leadless Chip Carrier / SO8
RF3826 Features
- 30 to 2500MHz Instantaneous Bandwidth
- -40 to 85°C Operating Temperature
- Output Power of 9W
- 28V Operation Typical Performance
- Gain: 12dB
- Power Added Efficiency: 45% (30 to 2500MHz)
- Power Added Efficiency: 50% (200 to 1800MHz)
•Datasheet: RF3826 GaN Wideband Power Amplifier
RFHA1000 Features
- 50 to 1000MHz Instantaneous Bandwidth
- -45 to 85°C Operating Temperature
- Output Power of 15W
- 28V Operation Typical Performance
- Gain: 17dB
- Power Added Efficiency: 60%
•Datasheet: RFHA1000 GaN Wideband Power Amplifier
RFHA1003 Features
- 30 to 512MHz Instantaneous Bandwidth
- -45 to 85°C Operating Temperature
- Output Power of 9W
- 28V Operation Typical Performance
- Gain: 19dB
- Power Added Efficiency: 70%
•Datasheet: RFHA1003 GaN Wideband Power Amplifier
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