Transistors
PRODUCTS AND SERVICES
These 35W GaN SiC RF Power Transistors are ideal for commercial and military radar, professional and military radio communications systems, jammers, wideband or narrowband filters, and test instrumentation. They cover the DC to 3.5 GHz frequency range and are available in a bolt down flanged package and in a solder down earless package.
Integra Technologies offers the IGT1112M90 X-band, GaN/SiC power transistor designed to meet the requirements of radar systems operating in the X-band. Operating in the 10.8 – 11.8 GHz frequency range with under 150µs and 10% duty cycle pulse conditions, the device supplies a minimum of 90 W of peak output power, with an associated 9 dB of gain and 35% efficiency.
The CMPA5259050F gallium nitride (GaN) high electron mobility transistor (HEMT) from Cree is designed to provide high efficiency, high gain, and wide bandwidth capabilities in applications operating in the 5.2 – 5.9 GHz frequency range. Supplied in a ceramic/metal flange package, the amplifier also operates at 50 Watts and 28 volts.