Laminates

The QPQ4900 is an exceptionally high performance BAW Filter for sub-Band n79. This filter is housed in a compact 2.0 x 1.6 mm package for base station applications. Low insertion loss, coupled with high attenuation makes this filter an ideal choice for TDD Macro Cells and Small Cells.

The MS1 crystals are high quality tuning fork resonators manufactured with a photolithographic process

Our any-frequency, any-output format Si5360 series clock generators combine a wide-band PLL with proprietary MultiSynth fractional synthesis technology to offer a versatile, ultra-low jitter clock generator platform.

The AR Modular RF MUOS Amplifier Module is a two-port device offering full-duplex operation with amplification in both the transmit and receive paths. The module is a sub-system designed for customer integration into a radio system where requirements demand more power than offered by a base or tactical radio alone.

The AMP20090 is a high-performance, small form factor rack-mounted amplifier designed for demanding EMI/RFI, lab, HIRF, and high-peak pulse applications.

Qorvo offers the QPF4219 integrated front end module (FEM) for Wi-Fi 5 (802.11ac) systems. The QPF4219 integrates a 2.4 GHz power amplifier (PA), regulator, single pole two throw switch (SP2T), bypassable low noise amplifier (LNA) and DC power detector into a single device. With a compact form factor and integrated matching, this module minimizes the layout area required for its application.

The Krytar Model 526550010 dual-directional coupler covers the 26.5 to 50 GHz frequency range and is ideal for use in power sampling and measurement, amplifier leveling, VSWR monitoring, field control, and amplifier and load protection. The new directional coupler lends itself to wireless designs and many test and measurement applications for the emerging mmWave and 5G markets.

Mimix Broadband, Inc. provides two gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two stage buffer amplifiers. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, these buffer amplifiers, identified as XB1007-BD and XB1008-BD, cover 4 to 11 GHz and 10 to 21 GHz, respectively