Laminates

DLI microstrip bandpass filters offer classical filter topologies yielding excellent performance in a small footprint when fabricated on ceramic substrate materials. Miniaturization can reach new levels by employing DLI high-k ceramic materials.

The QPA9501 is a high-power amplifier module from Qorvo designed for 5G, pre-5G small cell BTS, and Wi-Fi bands from 5100 to 5900 MHz within LTE-U/LAA applications. The module comprises an internally matched 3-stage power amplifier (PA), a compensated DC biasing circuit, and an output power detector. 

Teledyne HiRel Semiconductors has announced the release of the TDSW050A2T, a high-performance, rad-tolerant RF switch designed for demanding aerospace and defense applications.

The AMP20176 is a high-power, rack-mounted solid-state amplifier designed to deliver over 1000 watts of output power across a wide frequency range of 6.0 to 18.0 GHz.

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to 12 GHz.

This OCXO (oven controlled crystal oscillator) covers the 8 MHz to 100 MHz frequency range and features ultra-high stability (- to + 0.2 ppb over -10^oC to +60^oC), a low aging rate (- to + 0.2 ppb/day, + 0.03 ppm/year), a low allan variance (- up to 3E^-12 at 1s), and since wave or HCMOS outputs.

This Class AB linear GaN amplifier is engineered for high-performance airborne and phased-array X-Band pulse applications, delivering a minimum peak pulse power of 1000 W across the 9.0–10.0 GHz frequency range.