Laminates

The APN319 from Northrop Grumman is a GaN power amplifier that operates from 47.2 to 51.4 GHz. It provides an output power of 7 W with a gain of 20 dB and Power Added Efficiency of 19%. This amplifier requires 24 V DC supply and consumes 200mA of current. It is fabricated using a GaN on SiC process and measures 2.8 x 1.4 mm (3.92 mm²). The amplifier can be used in 5G and SATCOM systems.

The ADMV8526 is an RF band-pass filter that features a digitally selectable frequency of operation. The filter center frequency (f_CENTER) can be adjusted from 1.25 GHz to 2.60 GHz using an 8-bit value (256 states) that incorporates a patent pending interpolation technique.

The dB-3202 microwave power module (MPM) has a 200 Watt output power and operates in the 27.5 to 31 GHz frequency range. With its excellent reliability, it is ideal for datalink applications and is useful in extreme military environments.

The AMP40028 Solid State High Power Amplifier is designed for EMI/RFI, lab, CW/Pulse and all EW communication applications and features a small form factor and rack-mounted system.

The NuPower™ S100A01 S-Band Power Amplifier is a small, ultra-high-power solid-state power amplifier module for CW operation, delivering a minimum of 100 watts of RF power from 2000 MHz to 2500 MHz to boost signal power levels. Applications for this product include UAS, UGV, Broadband RF Telemetry, RF Communication Systems and more.

Introducing the AMP40012 Solid State High Power Pulse Amplifier: A compact, reliable solution for EMI/RFI, lab, and HIRF/Pulse applications.

Qorvo offers the 1800 W, 65 V, 1.0 – 1.1 GHz QPD1025L as the highest GaN transistor on the market. This discrete GaN on SiC HEMT has a package that features input pre-match resulting in ease of external board match and saved board space.

The AMP40041 is a solid-state high-power pulse amplifier designed for applications requiring high peak pulse power in the 4.0 - 6.0 GHz frequency range.