Products and Services
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E-pHEMT MMIC - AE314
6/29/2009
AE314 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
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75 W, 2.7 - 3.5 GHz GaN MMIC Power Amplifier: CMPA2735075F
9/4/2019
The CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) suited for civil and military pulsed radar applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity.
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Silicon MMIC Amplifier (BGA2003 T/R)
1/21/2009
Silicon MMIC amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a plastic, 4-pin SOT343R package.
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XP1003 27.0 To 35.0 GHz GaAs MMIC Power Amplifier
12/13/2002
Mimix Broadband's two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a typical third order intercept point of +34.0 dBm...
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8.5 – 11 GHz, 4 W GaN Power Amplifier: QPA1022D
7/25/2019
The Qorvo QPA1022D is a MMIC power amplifier operating from 8.5 – 11 GHz for radar, electronic warfare, and satellite communications applications. Fabricated on Qorvo’s production 0.25 um GaN on SiC process, the amplifier produces greater than 4 W of saturated output power and 24 dB of large-signal gain while achieving greater than 45% power-added efficiency.
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XL1010-QT: 20 To 38 GHz GaAs MMIC Low-Noise Amplifier
4/2/2008
Mimix Broadband’s three stage 20.0-38.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 17.0 dB with a noise figure of 3.0 dB. The device comes in a RoHS compliant, 3x3mm QFN package and requires only a single positive bias supply.
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E-pHEMT MMIC - AE312
6/29/2009
AE312 is designed as low cost drive amplifiers for many applications including FTTH, CATV System. This MMIC is based on Gallium Arsenide Enhancement Mode pHEMT which shows low current draw and very low noise.
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37 To 40 GHz 1 W Power Amplifier (MMIC Die): AMMC-6442
3/29/2010
Avago Technologies’ 37 - 40 GHz 1W Power Amplifier (MMIC Die): AMMC-6442 is a 1W power amplifier MMIC die for use in transmitters that operate at frequencies between 37 GHz and 40 GHz. Typical applications include point-to-point radio systems and millimeter – wave communications.
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MHA-495433: 4.9 To 5.4 GHz 2W InGaP HBT MMIC Power Amplifier
7/2/2008
The MHA-495433 is a high-performance reliable MMIC power amplifier utilizing high-reliability, high-breakdown voltage InGaP HBT technology. Power MMIC is ideally suited for driver or output stages in wireless applications such as 802.16 WiMAX, 802.11 WLAN & ISM, point-to-point radios & Telecom Infrastructure. MHA-495433 HBT MMIC Power Amplifier Chip has 50-ohm fully-matched output, pre-matched input, on-chip DC blocking capacitor, active bias and power detector built into the chip.
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2-18 GHz Low Noise Amplifier With AGC: TGA2525
10/13/2020
The TriQuint TGA2525 is a compact LNA Gain Block MMIC with adjustable gain control (AGC). The LNA operates from 2-18 GHz and is designed using TriQuint’s proven standard 0.15 um Power pHEMT production process.