MwT-22Q4: High Power, High Linearity Packaged FET

The MwT-22Q4 is a high linearity GaAs MESFET device in low cost QFN package that is ideally suited for high power / high linearity applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge, cdma2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructure applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In addition, the product can be used for point-to-point microwave communications links. The third order intercept performance of the MwT-22Q4 is excellent, typically 14 dB above the 1 dB power gain compression point. The chip is produced using MwT's proprietary high linearity device design and process with reliable metal system. All chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability.

Features

• Ideal for DC-4000 MHz High Power / High Linearity Applications
• Excellent RF Performance:
  • 33 dBm P1dB
  • 47 dBm IP3
  • 16 dB SSG @ 2000 MHz
  • 40% PAE
• MTTF > 100 years @ Channel Temperature 150°C
• QFN 4x4 mm Surface Mount Package