RF Amplifiers Featured Articles
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RF Test Setup For Measuring Power & Harmonics
1/18/2023
Power measurement is accomplished by using a high-power calibrated coupler or attenuator, which gets attached to the Amplifier RF output connector. Harmonics are recorded similarly by increasing the input drive from the signal source.
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Amplifier Classification: A vs. AB
1/18/2023
Amplifiers are designed in many ways. We discuss in this application note the differences between the different classifications and what it means with respect to performance.
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How Can Additive White Gaussian Noise Assess Amplifier Linearity With The Noise Power Ratio?
12/1/2022
From testing a system’s response to interference, maximizing the power levels of Directed Energy Weapons via coherence spreading, and securely encrypting sensitive data, AWGN sources are versatile tools that can improve advanced systems.
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How Can Crest Factor Be Used to Assess Amplifier Linearity?
10/25/2022
Crest factor (CF) is the ratio of a signal's peak amplitude to its average power. Analyzing an amplifier's input and output CF values can validate linear operation or determine nonlinearities in the system.
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Amplifier Linearity – What Is It & How Is It Measured?
10/25/2022
A nonlinear amplifier will not faithfully reproduce its input signal and adds distortion to the waveform. Testing the linearity of an amplifier, therefore, is critical to maintain high-fidelity communications.
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Why Are Boonton Test Solutions The Performance Leaders In RF And Microwave Power Measurement?
10/24/2022
In this post, learn essential power measurement terminology, leading peak power and average power sensor capabilities, and how state-of-the-art solutions from Boonton can solve test challenges.
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Power Amplifier Characterization Essentials
10/20/2022
This white paper examines the importance of power amplifier nonlinear characterization, time domain versus frequency domain characterization measurements, and three key measurements using VCA.
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4kW X-Band GaN Power Amplifier And Receiver Protector For Radar
10/11/2022
CPI EDB has developed a 4 kW X-band SSPA, model VSX3717, the latest evolution of the solid-state technology and improvement in power density, software control, and health and status monitoring.
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Bias and RF Sequencing For GaN And LDMOS RF Power Devices
9/23/2022
GaN HEMT (High-Electron-Mobility Transistor) and LDMOS MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) are voltage-controlled field-effect transistors requiring specific bias sequencing to ensure safe operation.
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Wolfspeed RF GaN Meets 5G Demands On PA Design
9/23/2022
Since creating the industry’s first GaN on SiC HEMT over two decades ago, Wolfspeed has enabled and driven the market by offering GaN on SiC products that effectively replace LDMOS parts in applications.