Mimix Broadband's 36.0-40.0 GHz GaAs MMIC up-converter has a typical small signal conversion gain of 4.0 dB with a 35 dB typical LO/RF isolation. The device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 17.0-21.0 GHz. This is followed by a two stage LNA. The image reject mixer removes the need for a BPF after the mixer to suppress the unwanted sideband. The use of the sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. This MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
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