This RF amplifier operates in the DC-20 GHz frequency range and features small die size, a low noise figure, and low current consumption. This amplifier is ideal for microwave radio and VSAT, telecom infrastructure, test instrumentation, and military and space applications.
The CMD173 Wideband GaAs MMIC Distributed Amplifier delivers greater than15 dB of gain with a corresponding output 1dB compression point of +18 dBm and noise figure of 2 dB at 10 GHz, and is the perfect alternative to higher cost hybrid amplifiers.
This amplifier has an all-positive bias design, thus eliminating complicated and costly sequencing circuits while also simplifying board layout. In addition, the use of on-chip tracking circuits delivers consistent performance over temperature and process variation. The CMD173 Wideband GaAs MMIC Distributed Amplifier is a 50 Ohm matched design that offers full passivation for increased reliability and moisture protection. The device does require off-chip bias networks, which is typical of this amplifier topology.