Newsletter | March 22, 2022

03.22.22 -- Why GaN Is 5G's Super Power
 
Spotlight On GaN/GaAs/SiGe Solutions
Why GaN Is 5G’s Super ‘Power’: A Series
  Article | By Roger Hall, Qorvo

While some feel gallium nitride (GaN) is still a relatively new technology, many can't dispute how it's advanced to the head of the class. GaN is a technology on the cusp of dethroning silicon LDMOS, which has been the material of choice in high-power applications.
mMIMO Enables 5G, GaN On SiC Enables mMIMO
  Article | Wolfspeed, A Cree Company

Massive multiple-input multiple-output (mMIMO) significantly increases the number of antennas on a single array. The emergence of gallium nitride (GaN) on high-thermal conductivity silicon carbide (SiC) substrate has enabled mMIMO implementation and thus 5G.
GaN Breaks Barriers — RF Power Amplifiers Go Wide And High
  White Paper | By Keith Benson, Analog Devices

The increasing demand for higher data rates in telecommunications and higher resolution in industrial systems is pushing the frequency of operation higher for their supporting electronics. Many systems operate over a wide frequency, so increased bandwidths are a common request for new designs. 
Why Gallium Nitride (GaN)?
Article | By Jewell Steamer, NuWaves Engineering

Gallium nitride (GaN) technology's ability to support high frequency, wide bandwidths, and high-power density make it invaluable in any market requiring high performance in a small form factor. This article compares GaN to other semiconductor technologies.
Industry Insights
Better Alternative For Measuring Linearity Of GaN Amplifiers
White Paper | Empower RF Systems, Inc.

GaN devices continue to be a key element in many radar, electronic warfare, satellite, and terrestrial communication systems. This article will focus on the applications in which amplifier linearity is the critical attribute.
Design And Performance Of High-Efficiency, Ka-band GaN Power Amplifiers
White Paper | By Nicholas Estella, Edmar Camargo, James Schellenberg, and Lani Bui, QuinStar Technology, Inc.

This white paper reports the design and performance of state-of-the-art GaN MMICs and a fully packaged Ka-band SSPA. Incorporating harmonic tuning, the MMICs produce power levels up to 10 W CW with efficiencies in the high 30s (42% peak) at frequencies of 30 to 34 GHz. 
Eutectic Die-Attach Method Of GaN And GaAs MMICs
White Paper | SemiGen

This white paper reviews the many challenges to overcome when developing a repeatable eutectic die-attach process, including avoiding contamination, ensuring the quality of the pickup collets, and balancing efficiency and accuracy during screening procedures.
Most Popular News
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Solid-State Power Amplifiers
 

CPI offers a comprehensive line of solid-state GaN power amplifiers optimized for operation within the L-band, S-band, and X-band. These amplifiers provide high gain, high efficiency, and excellent stability, with excellent AM/PM and phase-noise performance.
Featured Products And Resources
High-Performance GaN & GaAs Solutions

This brochure features solutions for defense and aerospace applications. Products included are the QPA2212, QPA3070, and QPD1025L.
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Qorvo
Solid-State High-Power Amplifier: AMP2107ADB-2

Exodus introduces the AMP2107ADB-2, a solid-state, high-power amplifier. This amplifier is best suited for communications testing, EMI-Lab, and EW applications. 
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Exodus Advanced Communications
GaN Power Amplifier: APN319

The APN319 from Northrop Grumman is a GaN power amplifier that operates from 47.2 to 51.4 GHz. It provides an output power of 7 W with a gain of 20 dB and power added efficiency of 19%. This amplifier requires 24 V DC supply and consumes 200 mA of current. It is fabricated using a GaN on SiC process and measures 2.8 x 1.4 mm (3.92 mm2). The amplifier can be used in 5G and SATCOM systems.
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Northrop Grumman Microelectronic Products & Services
20 MHz - 6.0 GHz GaAs SPDT Switch: SKY13351-378LF

The SKY13351-378LF is a pHEMT GaAs FET I/C switch operating in the 20 MHz to 6.0 GHz frequency range. This single-pole double-throw (SPDT) switch features positive voltage control, very low insertion loss, high isolation, and excellent linearity performance. Typical applications include many wireless applications such as use in WLAN 802.11 a/b/g/n networks, WLAN repeaters, ISM band radios, and low-power transmit receive systems.
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Skyworks Solutions, Inc.
Passive GaAs MMIC 50GHz Equalizer: MEQ10-50AU

Marki Microwave offers the MEQ10-50AU passive GaAs MMIC gain equalizer that operates from DC to 50 GHz. It provides a positive slope from DC to 50 GHz with a DC attenuation value of 10 dB.
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Marki Microwave Inc.