80 W, 5.2 – 5.9 GHz GaN/SiC Transistor: IGN5259M80R2 Datasheet

The IGN5259M80R2 GaN/SiC transistor operates in the 5.2 to 5.9 GHz frequency range at a peak power of 80 W. The device utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications. For more specifications on the IGN5259M80R2 transistor, download the datasheet.