Integra Technologies introduces the IGN5259M80R2 GaN/SiC transistor operating within the 5.2 to 5.9 GHz frequency range at a peak power of 80 W. This device is 100% tested for large signal parameters.
The transistor utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications.
Additional features include:
For more specifications on the IGN5259M80R2 transistor, download the datasheet.