Product/Service

80 W, 5.2 – 5.9 GHz GaN/SiC Transistor: IGN5259M80R2

Source: Integra Technologies, Inc.

80 W, 5.2 – 5.9 GHz GaN/SiC Transistor: IGN5259M80R2

Integra Technologies introduces the IGN5259M80R2 GaN/SiC transistor operating within the 5.2 to 5.9 GHz frequency range at a peak power of 80 W. This device is 100% tested for large signal parameters.

The transistor utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications.

Additional features include:

  • POUT-PK = 80W @ 150us/10%/50V
  • Power Gain: 15 dB (max)
  • Package Size: W = 0.800″ (20.32 mm), L=0.230″ (5.84mm)
  • 100% high power RF tested in broadband RF test fixture

For more specifications on the IGN5259M80R2 transistor, download the datasheet.