80 W, 5.2 – 5.9 GHz GaN/SiC Transistor: IGN5259M80R2
Source: Integra Technologies, Inc.
Integra Technologies introduces the IGN5259M80R2 GaN/SiC transistor operating within the 5.2 to 5.9 GHz frequency range at a peak power of 80 W. This device is 100% tested for large signal parameters.
The transistor utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications.
Additional features include:
- POUT-PK = 80W @ 150us/10%/50V
- Power Gain: 15 dB (max)
- Package Size: W = 0.800″ (20.32 mm), L=0.230″ (5.84mm)
- 100% high power RF tested in broadband RF test fixture
For more specifications on the IGN5259M80R2 transistor, download the datasheet.
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