130 W, 3.8 – 4.2 GHz GaN/SiC Transistor: IGN3842M130 Datasheet

The IGN5259M80R2 GaN/SiC is a transistor operating within the 3.8 to 4.2 GHz frequency range at an average power of 130 W. The device utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications. For more specifications on the IGN3842M130 transistor, download the datasheet.