130 W, 3.8 – 4.2 GHz GaN/SiC Transistor: IGN3842M130
Source: Integra Technologies, Inc.
Integra Technologies introduces theIGN3842M130 GaN/SiC transistor operating within the 3.8 to 4.2 GHz frequency range at an average power of 130 W. This device is 100% tested for large signal parameters.
The transistor utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications.
Additional features include:
- POUT-PK =130W @ 100us/2%/50V
- Power Gain: 15 dB (max)
- Package Size: W=0.800″ (20.32mm), L=0.230″ (5.84mm) ORW=0.390 (9.91mm), L=0.230 (5.84mm)
- 100% high power RF tested in broadband RF test fixture
For more specifications on the IGN3842M130 transistor, download the datasheet.
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