Product/Service

130 W, 3.8 – 4.2 GHz GaN/SiC Transistor: IGN3842M130

Source: Integra Technologies, Inc.

Integra Technologies introduces theIGN3842M130 GaN/SiC transistor operating within the 3.8 to 4.2 GHz frequency range at an average power of 130 W. This device is 100% tested for large signal parameters.

The transistor utilizes GaN on SiC HEMT technology and comes with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid, and is used for C-band radar applications.

Additional features include:

  • POUT-PK =130W @ 100us/2%/50V
  • Power Gain: 15 dB (max)
  • Package Size: W=0.800″ (20.32mm), L=0.230″ (5.84mm) ORW=0.390 (9.91mm), L=0.230 (5.84mm)
  • 100% high power RF tested in broadband RF test fixture

For more specifications on the IGN3842M130 transistor, download the datasheet.