130 W And 135 W Matched Power Transistor Options For S-Band Radar

Integra Technologies, a leading designer and supplier of high power RF and microwave transistors and amplifiers, has announced a pair of 135 W and a 130 W GaN-on-SiC transistors for S-band radar applications.

IGT2731M130 is a 50-Ohm matched high-power GaN HEMT transistor, suppling a minimum of 130 W of peak pulsed power, a gain of 13.5 dB and a drain efficiency of 55%, at pulse conditions of 300 microseconds/10% duty cycle. It operates at the instantaneous operating frequency range of 2.7 to 3.1 GHz, and is a depletion mode device. It requires a negative gate bias voltage and bias sequencing.

IGT3135M135 operates at the instantaneous operating frequency range of 3.1 to 3.5 GHz, supplying up to 135 W of peak pulsed power. This transistor is also a 50-Ohm matched high-power GaN HEMT transistor and is also a depletion-mode device that requires a negative gate bias voltage and bias sequencing.

Both products come in Integra’s package PL44A1, size is at 0.800 in. (20.32 mm) wide and 0.400 in. (10.16 mm) long. Earless, they are 0.400 in. (10.16 mm) wide and 0.400 in. (10.16 mm) long. Assembled via chip and wire technology, utilizing gold metallization, both units are housed in a metal-based package and sealed with a ceramic-epoxy lid.

To learn more about IGT2731M130 and IGT3135M135 and to download the datasheets, visit http://www.integratech.com/SBandR.aspx.

About Integra Technologies, Inc.

Integra is a leading designer, manufacturer, innovator, and global supplier of high-power RF and microwave transistors and power amplifiers. They have a demonstrable heritage as a provider of dependable standard and custom solutions for low to high volume EW, radar, avionics, defense, communications, and ISM programs. The technologies that Integra fabricates with include GaN/SiC HEMT, Si-LDMOS, Si-VDMOS, and Si-Bipolar semiconductor approaches proven in their own fab, and with redundant partners. For more information, visit www.integratech.com.