By A. Prejs, et al.
A systematic and consistent approach to the thermal modeling and measurement of GaN on SiC HEMT power transistors is described. Since the power density of such multilayered wide bandgap structures and assemblies can be very high compared with other transistor technologies, the application of such an approach to the prediction of operating channel temperatures (and hence product lifetime) is important. This white paper discusses how to determine the maximum channel temperature under specific operating modes, particularly for products operating under CW conditions and dissipating large amounts of thermal energy. Download the full paper for more information.