The Design Of A 125 W L-Band GaN Power Amplifier
Source: Plextek RFI
Commercially available GaN discrete transistors have steadily grown in their frequency range and performance abilities. Manufacturers must now make their parts available with high RF performance in terms of available gain, RF output power, and efficiency. This application note describes the design and evaluation of a single stage 125 W L-band GaN power amplifier utilizing a low-cost packaging transistor. Download the full paper for in-depth information on its design aspects, stability factors, measured performance levels, and more.
access the White Paper!
Log In
Get unlimited access to:
Trend and Thought Leadership Articles
Case Studies & White Papers
Extensive Product Database
Members-Only Premium Content
Welcome Back! Please Log In to Continue.
X
Enter your credentials below to log in. Not yet a member of RF Globalnet? Subscribe today.
Subscribe to RF Globalnet
X
Subscribe to RF Globalnet
This website uses cookies to ensure you get the best experience on our website. Learn more