As wireless communications networks look to a 5G future, the test and measurement industry faces significant challenges in meeting the revolution head on. To accommodate the huge array of devices and applications the market will require, 5G will be more a leap forward than a step up.
Along with numerous technical issues, test engineers are continuously facing time and schedule time constraints. The oscilloscope of the future aims to include all test instruments within a single box.
The R&S ZNH from Rohde & Schwarz is a full two-port handheld vector network analyzer, offering one-port cable and antenna measurement and full two-port S-parameter measurements. The analyzer features a small form factor but can deliver high performance and all the key functionalities.
Enabling CA requires simultaneous communication on multiple CCs. In some cases, the RF front end must support multiple transmit and/or receive paths between the antenna(s) and transceiver. Isolation of these paths requires multiplexed RF filters or physically separated antennas.
This thin film catalog has been revised to be easier to navigate through by product groups. Now you can search by product groups such as:chip resistors, microwave and RF resistors, chip attenuators, chip capacitors, networks and arrays, packaged resistors, jumpers/kits, and substrates.
CPI offers components for many ground-based radar systems and air traffic control (ATC) systems including S-band GaN high-power transmitters, S-band GaN high-power SSPAs, X-band GaN high-power SSPAs, magnetrons, receiver protectors, and limiters.
A multibillion dollar provider of tactical communication systems for the defense industry partnered with HUBER+SUHNER to develop a custom surge protection device (SPD) compatible with their man-pack and vehicle-mounted radio equipment.
Remcom’s XFdtd empowers ESD engineers to simulate TVS diodes and finalize protection circuitry for their products in the early stages of design. This improves product reliability and lowers cost by reducing the design engineering cycle time. In this webinar, learn how XFdtd's transient EM/circuit co-simulation effectively resolves ESD vulnerabilities earlier in the design process and prevents future certification setbacks.
Comtech’s latest development continues to expand on its proven innovative integrated RF GaN power amplifier designs by further increasing the bandwidth and power density. Comtech proudly introduces the Model BME49189-50, the latest in GaN-based, 4 to 18 GHz RF amplifiers.
The CMPA2060035F is a gallium nitride (GaN) high-electron mobility transistor (HEMT)-based monolithic microwave integrated circuit (MMIC) suited for ultra broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrument applications. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.