Silicon Carbide Power MOSFET With Industry's Lowest Rds(on) SiC At 1200 V: C3M0016120K

Source: Wolfspeed, A Cree Company

Wolfspeed offers the C3M0016120K silicon carbide power MOFSET with the industry’s lowest Rds(on) SiC at 1200 V in a discrete package. With a simpler two-level topology made possibly by improved switching performance, designers are able to reduce the count of components within their system. The separate Keliven source pin can further reduce switching losses by as much as 30 percent.

The C3M0016120K MOSFET features an industry leading 16mΩ Rds(on), +15V gate drive voltage, 115 A current rating at 25°C, and a fast, intrinsic diode with low reverse recovery (QRR). It is ideally suited for three-phase, bridgeless PFC topologies and other inverter and charger applications such as solar and energy storage, and electric vehicle charging.

For additional features, specifications, and operating parameters, download the datasheet.