Product/Service

SGB-4333 DC-3.0 GHz SiGe HBT Gain Block With Active Bias

Source: RFMD

sirenza33
Sirenza Microdevices' SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network
Sirenza Microdevices' SGB-4333 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply the SGB-4333 does not require a drop resistor as compared to typical Darlington amplifiers. This robust amplifier features a Class 1C ESD rating, low thermal resistance , and unconditional stability. The SGB-4333 product is designed for high linearity 3V gain block applications that require small size and minimal external components. It is on chip matched to 50 ohm and an external bias inductor choke is required for the application band.

Product Features

  • On-Chip Active Bias Control
  • No Drop Resistor Required
  • 3 x 3 QFN 16 Pin Package
  • IP3: +22.5 dBm @ 1950 MHz
  • Gain: +14.5 dB @ 1950 MHz
  • Robust Class 1C ESD Rating

Product Applications
  • 3v Applications
  • LO Buffer Amplifier
  • RF Pre-driver Stage
  • RF Receiver Amplifier Stage

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