New PHEMT Chips From Microwave Technology Operate To 28 GHz

Fremont, CA -- Microwave Technology Inc. (MwT), an IXYS Company, announced that it is adding a family of Power PHEMT (pseudomorphic high electron mobility transistor) chip and package parts.

MwT's new "PH" series of power AlGaAs/InGaAs PHEMT devices, the MwT-PH7, MwT-PH15, and MwT-PH16, are ideally suited for those applications that require medium power, high-gain, good linearity, high PAE (power added efficiency) and high power density. They operate from low frequencies to up to 28 GHz frequency range.

These PHEMTs are equally effective for either wideband (6 to 18 GHz) or narrow band applications. They have a P1dB that is nearly double that of standard GaAs MES FETs with the same geometry. These PHEMTs are produced using MwT's reliable metal systems designs. All devices from each wafer are 100% DC screened and are IDSS binned. Each wafer under goes a qualification process to insure the highest quality and reliability.

All of MwT PH series chips are passivated using MwT's patented "Diamond-Like Carbon" process for increased durability. These devices use the same layout and bonding as the popular MwT-7, MwT-15, and MwT-16 MESFETs. The PHEMTs are fabricated at MwT's GaAs fab using process technologies that have proven reliability for both commercial and hi-rel / space applications.

The PH series devices are are available in both chip and package form, and are deliverable from stock.

MwT also expects to release more new PHEMTs at higher power levels.

Source: Microwave Technology Inc.