News | May 14, 2015

Microsemi To Feature 13 New Products at IMS 2015

Source: Microsemi Corporation

Microsemi Introducing RF, Microwave and Millimeter Wave Devices

Aliso Viejo, CA — Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, announced on May 14 that it will feature 13 new products from its radio frequency (RF), microwave and millimeter wave integrated circuits (ICs), modules, monolithic microwave integrated circuits (MMICs) and subsystem portfolio at the 2015 IEEE MTT-S International Microwave Symposium (IMS2015) and Exhibition at the Phoenix Convention Center in Phoenix, Arizona May 17-22, 2015. 

"We are proud to launch these highly differentiated 13 new solutions, which cater to the shifting needs of our customer base, as well as the industry's growth forecasts in the defense, communications, instrumentation, industrial, and aerospace markets," said Norm Hildreth, vice president and general manager of Microsemi's Discrete Products Group. "Microsemi offers RF, microwave, and millimeter wave antenna to bits solutions with a progressive emphasis on high performance semiconductor (CMOS, SiGe, GaAs, GaN and InP) and packaging technologies. This has allowed us to work continuously with industry leaders in our target markets to solve complex engineering problems at the discrete, RFIC, MMIC, module and subsystem levels."

During the IMS2015 exhibition, the new devices, as well as other products from Microsemi, will be on display for engineers, system architects and researchers interested in technologies that would differentiate their new designs.

Product Exhibition Areas

Microsemi's booth #1348 will showcase product areas where attendees can interact with Microsemi technical experts, and can discuss some of the company's most innovative products and system solutions. Showcase products include:

GaN HEMT RF Power Transistors Cover L & S-Bands to 800 Watts                                                                            

Microsemi's expanded family of RF power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology will include featuring five new L & S-band RF power transistors rated between 150 watts (W) and 800 W. The new 1012GN-800V, 1214GN-600VHE, 1214GN-400LV, 3135GN-280LV and 2425GN-150CW RF power transistors deliver outstanding performance in terms of size, weight, power and efficiency in a wide range of avionics; radar; and industrial, scientific and medical (ISM) applications.

Monolithic SPST PIN Switch Elements Offer Low Loss Through 40 GHz

Microsemi's MPS4101-012S and MPS4102-013S are single-chip silicon monolithic series-shunt elements designed with minimal parasitic inductance to provide optimum insertion loss and isolation characteristics over the entire 50 MHz to 40 GHz frequency range. These products are ideal replacements for the conventional shunt mounted chip and series mounted beam lead PIN diode normally used in the manufacture of broadband microwave switches.

With less than 1.1 dB insertion loss and isolation of 31 dB at 26 GHz, coupled with fast switching times of 5 nS while handling 3 W of continuous wave (CW) power these devices are ideal for wideband high linearity applications such as test equipment, electronic countermeasures, and electronic warfare. These products meet RoHS requirements per EU directive 2002/95/EC.

Broadband Coaxial Limiters Deliver Receiver Protection to 100 Watts CW

Microsemi's GG77317-01 through GG77317-05 series of broadband coaxial limiters provide unprecedented CW power handling capability across the 10 MHz to 2.5 GHz, 10 MHz to 4 GHz and 10 MHz to 6 GHz frequency bands. Capable of limiting 60 W, 70 W and 100 W of incident CW power, these broadband coaxial limiters are ideal for receiver protection in ECM, EW, radar and test equipment applications. These coaxial limiters feature insertion losses as low as 0.3 dB and maximum VSWR values of 1.4:1 over the 2 to 3 GHz frequency range. All device variants provide 1,000 W of peak RF power handling capability and typical recovery times between 1.5 and 2 microseconds.

Suitable for use in rugged environments, as well as RF and microwave laboratory applications, these PIN diode-based limiters feature SMA female connectors and are designed to meet or exceed the MIL-STD-883 environmental conditions without damage.

RF Modules & Subsystems

Microsemi's L0618-50-T523 is a high-power broadband gallium nitride (GaN) amplifier that delivers 100 W of saturated output power over the 6 to 18 GHz frequency range, and is offered in a compact 10" x 8.25" x 6" rack mount configuration. Designed for land mobile electronic warfare applications, the L0618-50-T523 amplifier operates from -20 degrees C to +50 degrees C baseplate temperature, and is provided with heat sinks and fans for cooling. The amplifier is fault-protected with over temperature and reverse power monitors, and operates from a +28 to +36V DC power supply.

About Ultimate Performance MMICs

Microsemi's portfolio of MMIC products spans the DC to 65 GHz frequency range and targets a broad range of applications including those in electronic warfare, radars, test and measurement instrumentation, and microwave communications. The portfolio is based on high performance process technologies and comprises high-power and low-noise broadband amplifiers, amplifier modules, prescalers, attenuators and switches. Microsemi offers 17 distributed amplifier products. Microsemi's prescalers combine higher frequency operation, the flexibility to divide by a large number of ratios and excellent residual phase noise.

For product sales or technical information about the above products, contact sales.support@microsemi.com.

SOURCE: Microsemi Corporation