High Power Gallium Nitride (GaN) Amplifier: SSPA 20.0-24.0-40

Source: RFMW, Ltd.

High Power Gallium Nitride (GaN) Amplifier: SSPA 20.0-24.0-40

RFMW offers Aethercomm’s Model SSPA 20.0-24.0-40 as a high power, Gallium Nitride (GaN) amplifier that operates from 20 – 24 GHz. This amplifier is designed for operation in applications with high shock and vibration requirements. Typical output power is 40 watts, and power gain is 46 dB with input and output VSWR is 2.0:1 maximum.

This RF power amplifier operates from a 28 Vdc power supply and operates from -40˚C to 70˚C base plate temperature. There is an over temperature shut off function to protect the unit. This high-power RF module can be employed in any system that requires high power at Ka band. Standard housing size is approximately 4.0 (W) by 5.0 (L) by 2.0 (H) inches. An SMA female connector is standard on the RF input and output ports. The RF output connector is WR-42 waveguide.

For additional features and specifications on the SSPA 20.0-24.0-40, download the available datasheet.