High Power Gallium Nitride (GaN) Amplifier: SSPA 1.70-1.85-20
Datasheet: High Power Gallium Nitride (GaN) Amplifier: SSPA 1.70-1.85-20
Standard features include reverse polarity protection, output short and open circuit protection, and over/under voltage protection. This RF module contains internal filtering to ameliorate the noise power at GPS L1 and L2 and also for harmonic suppression. This RF power amplifier operates from a 22 to 32 Vdc power supply. This unit operates from -40C to 85C base plate temperature. There is an over temperature shut off function to protect the unit when the temperature exceeds 90C base plate.
This high power RF module can be employed in high shock and vibration environments. Standard housing size is approximately 4.00(w) by 6.50(l) by 1.15(h) inches. For mounting and heat sink instructions, please contact the factory. An SMA female connector is standard on the RF input and output ports. DC and logic connections are accessible via a DSUB connector.
Features:
- Operation across 1700 to 1850 MHz min
- High Power Added Efficiency
- 20 to 25 Watts Output Power
- 22 to 32 Vdc Operation
Datasheet: High Power Gallium Nitride (GaN) Amplifier: SSPA 1.70-1.85-20