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High-Efficiency Power Transistor: RF3932

Source: RFMD

High-Efficiency Power Transistor: RF3932
The RF3932 High-Efficiency Power Transistor is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN)semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design.

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High-Efficiency Power Transistor: RF3932 Datasheet

The RF3932 High-Efficiency Power Transistor is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a single amplifier.

Features

  • Broadband Operation DC to 3 GHz
  • Advanced GaN HEMT Technology
  • Advanced Heat-Sink Technology
  • Small Signal Gain=14 dB at 2 GHz
  • 48 V Operation Typical Performance
    • Output Power 75 W at P3 dB
    • Drain Efficiency 68% at P3 dB
    • -40°C to 85°C Operating Temperature
  • EAR99 Export Control

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High-Efficiency Power Transistor: RF3932 Datasheet