81-86 GHz GaAs HEMT High Power Amplifier: APH667
Source: Northrop Grumman Microelectronic Products & Services
This high power amplifier operates in the 81 to 86 GHz frequency range, and is ideal for wireless fiber replacement, short haul/high capacity links, and enterprise wireless LAN applications. It features a 2 mil substrate, a 25.5 dBm (typ) power saturation, 17dB (typ) linear gain, 4 VDC @ 630 mA DC power, and an 11.07 sq. mm die size.
The APH667 is a Gallium Arsenide-based broadband, three-stage power amplifier device, designed for use in commercial digital radios and wireless LANs. To ensure rugged and reliable operation, GaAs pHEMT devices are fully passivated. Both bond pad and backside metallization are Ti/Au, which is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques.
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