Product/Service

GaN/SiC Long-Pulse S-Band Transistor: IGN2731L200

Source: Integra Technologies, Inc.

Integra Technologies introduces IGN2731L200 long-pulse transistor with GaN on SiC HEMT technology, operating at 200 W for applications from 2.7 - 3.1 GHz. The transistor exhibits 14 dB typical gain, and 46 V drain bias at 3 milliseconds and 30% pulse conditions. It is specified for use under Class AB operation.

The S-band transistor is an internal impedance pre-matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.

Additional features include:

  • POUT-PK = 120W @ 3ms/30%/46V
  • Power Gain: 14.0 dB (typical)
  • Package Size: W=1.340″ (34.04 mm), L=0.385″ (9.78 mm)
  • 100% high power RF tested in fixed tuned RF test fixture

For more specifications on the GaN S-band long-pulse transistor, download the datasheet.