GaN/SiC Long-Pulse S-Band Transistor: IGN2731L200
Source: Integra Technologies, Inc.
Integra Technologies introduces IGN2731L200 long-pulse transistor with GaN on SiC HEMT technology, operating at 200 W for applications from 2.7 - 3.1 GHz. The transistor exhibits 14 dB typical gain, and 46 V drain bias at 3 milliseconds and 30% pulse conditions. It is specified for use under Class AB operation.
The S-band transistor is an internal impedance pre-matched device, and is included with depletion mode. It is housed in a metal based package sealed with a ceramic-epoxy lid.
Additional features include:
- POUT-PK = 120W @ 3ms/30%/46V
- Power Gain: 14.0 dB (typical)
- Package Size: W=1.340″ (34.04 mm), L=0.385″ (9.78 mm)
- 100% high power RF tested in fixed tuned RF test fixture
For more specifications on the GaN S-band long-pulse transistor, download the datasheet.
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